Method for producing an MOS transistor structure with elevated body conductivity
US6297101A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 29, 2000 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Feb 29, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/919
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method is described for producing an MOS transistor structure with elevated body conductivity, a substrate layer is prepared and body regions are formed therein the body regions defining a main surface of the transistor structure and at least one channel region is also formed. Gate oxide and gate electrodes are formed in the region of the main surface, and source regions are formed that extend from the main surface into the body regions. An implantation of dopant of a first conductivity type occurs in at least a part of the channel region, this implantation dosage being controlled such that a re-doping of the body region into an area of the first conductivity type does not occur in the implantation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.