Carsten Schaeffer
28Patents
4h-index
61Co-inventors
66Inventor score
Filing activity: Feb 29, 2000 → Aug 18, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7538412B2 | Semiconductor device with a field stop zone | Electricity | 137 | Active |
| US6297101A | Method for producing an MOS transistor structure with elevated body conductivity | Emerging Cross-Sectional Technologies | 14 | Expired |
| US8003502B2 | Semiconductor device and fabrication method | Electricity | 4 | Active |
| US7880200B2 | Semiconductor device including a free wheeling diode | Electricity | 4 | Active |
| US9337185B2 | Semiconductor devices | Electricity | 3 | Active |
| US9214521B2 | Reverse conducting IGBT | Electricity | 2 | Active |
| US8884342B2 | Semiconductor device with a passivation layer | Electricity | 2 | Active |
| US8304305B2 | Semiconductor component | Electricity | 1 | Active |
| US8003456B2 | Method for producing a semiconductor component | Electricity | 1 | Active |
| US9859272B2 | Semiconductor device with a reduced band gap zone | Electricity | 1 | Active |
| US11139375B2 | Semiconductor device and method of manufacturing a semiconductor device | Electricity | 0 | Active |
| US9571087B2 | Method of operating a reverse conducting IGBT | Electricity | 0 | Active |
| US9362349B2 | Semiconductor device with charge carrier lifetime reduction means | Electricity | 0 | Active |
| US11764176B2 | Semiconductor device including bonding pad metal layer structure | Electricity | 0 | Active |
| US10410911B2 | Buried insulator regions and methods of formation thereof | Electricity | 0 | Active |
| US12183696B2 | Semiconductor device including bonding pad metal layer structure | Electricity | 0 | Active |
| US9859395B2 | Semiconductor device with a passivation layer | Electricity | 0 | Active |
| US10475743B2 | Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device | Electricity | 0 | Active |
| US10777506B2 | Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device | Electricity | 0 | Active |
| US11171049B2 | Semiconductor device and a method of forming the semiconductor device | Electricity | 0 | Active |
| US10002930B2 | Forming a contact layer on a semiconductor body | Electricity | 0 | Active |
| US9231581B2 | Method of operating a reverse conducting IGBT | Electricity | 0 | Active |
| US8252671B2 | Semiconductor device and fabrication method | Electricity | 0 | Active |
| US12363961B2 | Semiconductor device | Electricity | 0 | Active |
| US9711621B2 | Trench transistor having a doped semiconductor region | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.