Air-bridge integration scheme for reducing interconnect delay
US6297125A · kind A · utility
25Cited by
9References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1999 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Jan 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Air-bridges are formed at controlled lateral separations using the extremely high HF etch rate of a gap-fill spin-on-glass such as uncured hydrogen silsequioxane (HSQ) in combination with other dielectrics having a much slower etch rate in HF. The advantages of an air-bridge system with controlled lateral separations include providing an interconnect isolation dielectric which meets all requirements for sub-0.5 micron technologies and providing a device with reduced reliability problems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.