Process to control the lateral doping profile of an implanted channel region
US6297132A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2000 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Feb 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/018
Abstract
A process for fabricating a MOSFET device, featuring a narrow lateral delta doping, or a narrow anti-punchthrough region, located in the center of the MOSFET channel region, has been developed. The process features formation of the narrow, anti-punchthrough region, via use of an ion implantation procedure, performed using an opening, comprised with sidewall spacers, as an implant mask. After formation of the narrow, anti-punchthrough region, the sidewall spacers are removed, and a gate insulator layer, and a polysilicon gate structure, are formed in the spacerless opening, defining a channel region wider than the narrow, anti-punchthrough region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.