Patent · US Expired

Method of fabricating well

US6297133A · kind A · utility

2Cited by
9References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 28, 1998
Grant dateOct 2, 2001
Priority date
Expiry dateJul 28, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/09

Abstract

A method of manufacturing wells comprises the step of providing a p-type substrate and then sequentially forming a p-well and n-well with low dosage in the p-type substrate. Thereafter, energy is used to dope n-type ions into the p-well. The triple well formed in the present invention has low dosage ions, hence the DRAM formed on the triple well in subsequent process can have a faster refresh time.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.