Bondable anodized aluminum heatspreader for semiconductor packages
US6297550A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1998 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Apr 1, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16152
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor package (100) includes a bondable aluminum heatspreader (130) made from anodized aluminum, thereby forming an anodization layer (132) on the surface of the heatspreader. Portions of the anodization layer are removed, e.g., by grinding, in order to provide an attachment area (124) to which a wire (122) or beam may be bonded in order to electrically connect the heatspreader to a desired voltage potential, such as a ground potential or a positive or negative potential. The heatspreader is thermally bonded to a semiconductor die (102) housed within the package. The anodized aluminum heatspreader thus not only removes and dissipates heat from the semiconductor die, but also functions as a voltage or ground plane within the semiconductor package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.