Silicon single crystal wafer and method for producing silicon single crystal wafer
US6299982A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 1999 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | May 18, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is disclosed a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, wherein a size of grown-in defects in the silicon single crystal wafer is 70 nm or less, a silicon single crystal wafer produced by processing a silicon single crystal ingot grown by Czochralski method with doping nitrogen, the silicon single crystal ingot is grown with controlling a rate of cooling from 1150 to 1080.degree. C. to be 2.3.degree. C./min or more, and a method for producing a silicon single crystal wafer wherein a silicon single crystal ingot is grown with doping nitrogen and controlling a rate of cooling from 1150 to 1080.degree. C. to be 2.3.degree. C./min or more, and is then processed to provide a silicon single crystal wafer. The silicon single crystal wafer for device wherein growth of the crystal defects is suppressed can be produced by CZ method in high productivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.