Selective growth of ferromagnetic films for magnetic memory, storage-based devices
US6299991A · kind A · utility
2Cited by
0References
11Claims
0Family size
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Key dates
| Filing date | Oct 15, 1998 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Oct 15, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the crystal structure of the ferromagnetic material
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.