Positive photoresist composition and process for forming resist pattern
US6300033A · kind A · utility
4Cited by
7References
6Claims
0Family size
Assignee
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Key dates
| Filing date | May 26, 1999 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | May 26, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/022
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, Ingredient (B) contains (B-1) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (B-2) a quinonediazide ester of, e.g., methyl gallate or 2,2-bis(2,3,4-trihydroxyphenyl)propane. The composition exhibits high sensitivity and definition, and improved focal depth range properties and underexposure margin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.