Enhanced plasma mode and system for plasma immersion ion implantation
US6300227A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1998 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Dec 1, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32688
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A novel plasma treatment method (800, 814). The method includes forming an rf plasma discharge in a vacuum chamber. The plasma discharge includes an inductive coupling structure, which has a first cusp region at a first end of the structure and a second cusp region at a second end of the structure. In some embodiments, a third cusp region, which is between the first and second cusp regions, can also be included. The first cusp region is provided by a first electro-magnetic source and the second cusp region is provided by a second-electro magnetic source. The first electro-magnetic source and the second electro-magnetic source confines a substantial portion of the rf plasma discharge to a region away from a wall of the vacuum chamber. Accordingly, a plasma discharge is substantially a single ionic species (e.g., H.sub.1 +) can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.