Method of fabricating node contact opening
US6300238A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1999 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Sep 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
A fabrication method of a node contact opening involves forming a first insulating layer on the substrate, in which a bit line, which contacts the substrate, is formed on the first insulating layer. A conformal second insulating layer that serves as an etching stop layer is formed after the formation of bit line. A third insulating layer is then formed to isolate the subsequently formed capacitor and bit line. A pattern mask is formed on the third insulating layer, while a pattern of the pattern mask is transferred into the third insulating layer, so that an opening is formed in the third insulating layer. After the second insulating layer in the opening is removed, a spacer is formed on a sidewall of the opening. With the pattern mask and the spacer serving as an etching mask, the first insulating layer below the bit line is etched until the opening is extended through to the substrate, so that a contact opening is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.