Programming flash memory analog storage using coarse-and-fine sequence
US6301161A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2000 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Apr 25, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is a method and apparatus to program a flash memory cell in an analog storage array. A read circuit reads a cell voltage of a flash memory cell. A comparator compares the read cell voltage with an input voltage representing an analog signal. The comparator generates first and second comparison results. A programming circuit generates a first program pulse corresponding to a first amplitude to iteratively program the flash memory cell based on the first comparison result. The programming circuit generates a second program pulse corresponding to a second amplitude less than the first amplitude to iteratively program the flash memory cell based on the first and second comparison results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.