Low dielectric constant multiple carbon-containing silicon oxide dielectric material for use in integrated circuit structures, and method of making same
US6303047A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 1999 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Mar 22, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2993
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low dielectric constant multiple carbon-containing silicon oxide dielectric material for an integrated circuit structure is described which comprises a silicon oxide material including silicon atoms which are each bonded to a multiple carbon-containing group consisting of carbon atoms and primary hydrogens. Preferably such multiple carbon-containing groups have the general formula --(C).sub.y (CH.sub.3).sub.z, where y is an integer from 1 to 4 for a branched alkyl group and from 3 to 5 for a cyclic alkyl group, and z is 2y+1 for a branched alkyl group and 2y-1 for a cyclic alkyl group. In one embodiment the low dielectric constant multiple carbon-containing silicon oxide dielectric material is made by reacting with a mild oxidizing agent a multiple carbon-substituted silane having only primary hydrogens bonded to the carbon atoms and having the formula SiH.sub.x ((C).sub.y (CH.sub.3).sub.z).sub.(4-x), where x ranges from 1 to 3, y is an integer from 1 to 4 for a branched alkyl group and from 3 to 5 for a cyclic alkyl group, and z is 2y+1 for a branched alkyl group and 2y-1 for a cyclic alkyl group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.