Method of manufacturing a capacitor in a semiconductor device
US6303427A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Sep 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of manufacturing a capacitor in a semiconductor device. It is designed to solve the problem due to oxidization of the surface of the underlying tungsten electrode during thermal process performed after depositing Ta.sub.2 O.sub.5 to form a dielectric film in a Ta.sub.2 O.sub.5 capacitor of a MIM (Metal Insulator Metal) structure using tungsten (W) as an underlying electrode. Thus, the present invention includes forming a good thin WO.sub.3 film by processing the surface of the underlying tungsten electrode by low oxidization process before forming a Ta.sub.2 O.sub.5 dielectric film and then performing deposition and thermal process of Ta.sub.2 O.sub.5 to form a Ta.sub.2 O.sub.5 dielectric film. As a good WO.sub.3 film is formed on the surface of the underlying tungsten electrode before forming a Ta.sub.2 O.sub.5 dielectric film, the grain boundary of the tungsten film is filled with oxygen atoms, thus preventing diffusion of oxygen atoms from the Ta.sub.2 O.sub.5 dielectric film during a subsequent thermal process. Also, as a further oxidization of the surface of the underlying tungsten electrode by the WO.sub.3 film could be prevented, the…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.