Method for introducing an equivalent RC circuit in a MOS device using resistive wells
US6303444A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 19, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Oct 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/854
Abstract
A method for providing low power MOS devices that include buried wells specifically designed to provide a resistive path between the bulk material of the device and a well tie contact. By providing a resistive path, an equivalent RC circuit is introduced to the device that allows the bulk material potential to track the gate potential, thereby advantageously lowering the threshold voltage as the device turns on and raising the threshold voltage as the device turns off. In addition, the introduction of the resistive path also allows the bulk material potential to be controlled and stabilize at an equilibrium potential between clock cycles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.