CMOS device structures and method of making same

US6303450A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Heemyong Park · Lagrangeville, US
• Anda C. Mocuta · Hopewell Junction, US
• Werner Rausch · Hopewell Junction, US

Key dates

• Filing date: Nov 21, 2000
• Grant date: Oct 16, 2001
• Expiry date: Nov 21, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6741

Abstract

Disclosed is a method comprising providing a silicon surface with an underlying insulator layer, providing a plurality of gates adjacent to source/drain regions, growing source/drains between the said gates such that the source/drains are thicker in regions of larger gate-to-gate pitch, and doping the source/drains with one or more dopants such that the dopants abut the underlying insulator layer.