Method for manufacturing trench isolation
US6303467A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Jul 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing trench isolation, comprising firstly, defining a trench isolation over the substrate by photolithography and etching technique. Beside, by way of a spacer fabricating process to form a spacer around each of the two sides of the trench isolation. Therefore, a sharp corner in the crossing region between the trench isolation and an active area adjacent thereto in the substrate is smoothed, and the process window for a sequential gate polysilicon etching is improved, as well as the opportunity to leave polysilicon residue in the corner is eliminated. The short circuit between polysilicon gates is also avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.