Method for making a thin film of solid material
US6303468A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Feb 14, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of manufacturing a thin film of solid material comprising at least the following steps: PA1 a step of ionic implantation through one face of a substrate of said solid materials using ions capable of creating in the volume of the substrate and at a depth close to the mean depth of penetration of the ions, a layer of micro-cavities or micro-bubbles, this step being carried out at a particular temperature and for a particular length of time, PA1 an annealing step intended to bring the layer of micro-cavities or micro-bubbles to a particular temperature and for a particular length of time with the intention of obtaining cleavage of the substrate on both sides of the layer of micro-cavities or micro-bubbles. The annealing step is carried out to a thermal budget made in relation to the thermal budget of the ionic implantation step and possibly other thermal budgets inferred for other steps, in order to provide said cleavage of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.