Method of producing gallium nitride-based III-V Group compound semiconductor device
US6303485A · kind A · utility
1Cited by
2References
6Claims
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Key dates
| Filing date | Jun 21, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Jun 21, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/93
Abstract
The present invention proposes a method of producing a gallium nitride-based III-V Group compound semiconductor device. First, beryllium ions are diffused into the p-type layer of gallium nitride to increase hole mobility. Contacts are then added in subsequent procedures, thereby forming contacts having low-impedance ohmic contact layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.