Arima Optoelectronics Corp.
26Patents
6Active
26Granted
36Portfolio score
Filing activity: Dec 2, 1999 → Mar 30, 2010 · 6 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6614060B1 | Light emitting diodes with asymmetric resonance tunnelling | Electricity | 86 | Expired |
| US6614170B2 | Light emitting diode with light conversion using scattering optical media | Emerging Cross-Sectional Technologies | 45 | Expired |
| US6395564B1 | Method for fabricating a light-emitting device with uniform color temperature | Electricity | 41 | Expired |
| US6677903B2 | Mobile communication device having multiple frequency band antenna | Electricity | 40 | Expired |
| US6344665B1 | Electrode structure of compound semiconductor device | Electricity | 38 | Expired |
| US6455870B1 | Unipolar light emitting devices based on III-nitride semiconductor superlattices | Electricity | 36 | Expired |
| US7291874B2 | Laser dicing apparatus for a gallium arsenide wafer and method thereof | Performing Operations; Transporting | 18 | Expired |
| US6130445A | LED with AlGaInP Bragg layer | Electricity | 15 | Expired |
| US6753818B2 | Concealed antenna for mobile communication device | Electricity | 7 | Expired |
| US7177331B2 | Laser diode module with a built-in high-frequency modulation IC | Electricity | 6 | Expired |
| US6687275B2 | Resonating cavity system for broadly tunable multi-wavelength semiconductor lasers | Electricity | 6 | Expired |
| US6417522B1 | Led with alternated strain layer | Electricity | 6 | Expired |
| US7061026B2 | High brightness gallium nitride-based light emitting diode with transparent conducting oxide spreading layer | Electricity | 5 | Expired |
| US7199390B2 | Window interface layer of a light-emitting diode | Electricity | 5 | Active |
| US6380050B1 | Method of epitaxially growing a GaN semiconductor layer | Electricity | 4 | Expired |
| US6577661B1 | Semiconductor laser with lateral light confinement by polygonal surface optical grating resonator | Electricity | 4 | Expired |
| US6396862B1 | LED with spreading layer | Electricity | 3 | Expired |
| US7177333B2 | Laser diode device with an APC inside the cap | Electricity | 3 | Expired |
| US7781755B2 | Light emitting diode by use of metal diffusion bonding technology and method of producing such light emitting diode | Electricity | 3 | Active |
| US7677782B2 | LED flat lamp | Physics | 2 | Active |
| US7704770B2 | Light emitting diode by use of metal diffusion bonding technology and method of producing light emitting diode | Electricity | 2 | Active |
| US7023892B2 | Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injection | Electricity | 1 | Expired |
| US6924511B2 | Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator | Electricity | 1 | Expired |
| US6303485A | Method of producing gallium nitride-based III-V Group compound semiconductor device | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7397182B2 | Display module using blue-ray or ultraviolet-ray light sources | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.