Method for preventing seed layer oxidation for high aspect gap fill
US6303498A · kind A · utility
28Cited by
17References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1999 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Aug 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method is provided whereby a copper seed layer is deposited over a barrier layer of TaN. Under the first embodiment of the invention, a doped seed layer is deposited over the barrier layer. Under the second embodiment of the invention a thin layer of metal is deposited over a seed layer of pure copper thereby preventing oxidation of the copper seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.