Composition and method for selectively etching a silicon nitride film
US6303514A · kind A · utility
9Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention relates to an aqueous phosphoric acid etch bath composition with a readily soluble silicon containing composition. The baths are used in the etching step of composite semiconductor device manufacturing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.