High temperature short time curing of low dielectric constant materials using rapid thermal processing techniques
US6303524A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2001 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Feb 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for curing low k dielectric materials uses very short, relatively high temperature cycles instead of the conventionally used (lower temperature/longer time) thermal cycles. A substrate, such as a semiconductor wafer, coated with a layer of coating material is heated to an elevated temperature at a heating rate of greater than about 20.degree. C. per second. Once the coating material has been converted to a low dielectric constant material with desired properties, the coated substrate is cooled. Alternatively, spike heating raises and promptly lowers the temperature of the coated substrate to effect curing in one or a series of spike heating steps. The method allows for a thinner refractory barrier metal layer thickness to prevent copper diffusion, and uses shorter curing times resulting in higher throughput.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.