Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film
US6303551A · kind A · utility
34Cited by
26References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | May 9, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.