Method and apparatus for controlling a temperature of a wafer
US6303895A · kind A · utility
11Cited by
20References
19Claims
0Family size
Inventors
Key dates
| Filing date | Jun 2, 2000 |
| Grant date | Oct 16, 2001 |
| Priority date | — |
| Expiry date | Jun 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for controlling a temperature of a wafer during processing such as in a gas plasma or nonplasma environment wherein a wafer is positioned on a chuck. The wafer is heated and a pressurized gas is introduced into a space between the wafer and the chuck such that the pressurized gas transfers heat from the wafer to the chuck. Pressure of the pressuried gas is automatically varied such that heat transfer between the wafer and the chuck is varied in response to a difference between an actual wafer temperature and a desired wafer temperature to maintain the desired wafer temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.