Process for fabricating a high quality CMOS image sensor
US6306678A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1999 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Dec 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A process of fabricating an image sensor cell, on a semiconductor substrate, with the image sensor cell exhibiting low dark current generation, and high signal to noise ratio, has been developed. The process features the use of a photoresist shape, used to protect a previously formed photodiode element, from an reactive ion etching procedure, used to define insulator spacers on the sides of a polysilicon gate structure, of a reset transistor structure This process sequence avoids damage to the surface of an N type component, of the photodiode element, resulting in the improved electrical characteristics, when compared to counterpart image sensor cells, in which the photodiode element was subjected to the insulator spacer definition procedure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.