Wei-Kun Yeh
11Patents
8h-index
12Co-inventors
61Inventor score
Filing activity: Aug 29, 1994 → Apr 9, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5393686A | Method of forming gate oxide by TLC gettering clean | Emerging Cross-Sectional Technologies | 28 | Expired |
| US6514785B1 | CMOS image sensor n-type pin-diode structure | Electricity | 20 | Expired |
| US6350127B1 | Method of manufacturing for CMOS image sensor | Electricity | 18 | Expired |
| US6531725B2 | Pinned photodiode structure in a 3T active pixel sensor | Electricity | 11 | Expired |
| US6306678A | Process for fabricating a high quality CMOS image sensor | Electricity | 11 | Expired |
| US5700739A | Method of multi-step reactive ion etch for patterning adjoining semiconductor metallization layers | Electricity | 10 | Expired |
| US5935876A | Via structure using a composite dielectric layer | Electricity | 9 | Expired |
| US6534356B1 | Method of reducing dark current for an image sensor device via use of a polysilicon pad | Electricity | 9 | Expired |
| US6372537B1 | Pinned photodiode structure in a 3T active pixel sensor | Electricity | 7 | Expired |
| US6161053A | In-situ binary PCM code indentifier to verify a ROM code id during processing | Electricity | 3 | Expired |
| US6440859B1 | Method for etching passivation layer of wafer | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.