Photodiode having transparent insulating film around gate islands above P-N junction
US6306679A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2000 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | May 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/806
Abstract
An embodiment of the invention is directed to a semiconductor photodiode made of a number of gate islands being spaced from each other and electrically insulated from each other by spacers. The spacers are formed above a p-n junction of the photodiode. The incident light is detected after it passes through the spacers and into a photosensitive region of the photodiode. The photodiode can be built using conventional metal oxide semiconductor (MOS) processes of the polysilicon-silicided gate or self-aligned types that use a lower doped drain (LDD) structure, without requiring an additional mask step that prevents the formation of the opaque silicide above the photosensitive semiconductor regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.