In-situ liner for isolation trench side walls and method
US6306725A · kind A · utility
8Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2000 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | May 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An isolation trench (60) comprising a trench (20) formed in a semiconductor layer (12). A barrier layer (22) may be formed along the trench (20). A layer (50) of an insulation material may be formed over the barrier layer (22). A high density layer (55) of the insulation material may be formed in the trench (20) over the layer (50).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.