Method of manufacturing semiconductor device
US6306761A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 25, 1996 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Apr 25, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hard Al oxide film having a high melting point, which grows on the surface of an Al--Cu film during a wafer is carried in atmospheric air, obstructs the burying of a viahole with the Al--Cu film by high pressure reflow, with a result that a void remains in the hole. The present invention is intended to remove such an Al oxide film grown on the Al--Cu film formed by sputtering, by Ar.sup.+ sputtering/etching directly before high pressure reflow. Moreover, when a Ti oxide film is present on the surface of a Ti based underlying film formed by CVD, an Al oxide film is possibly grown at the boundary between the Ti based underlying film and an Al--Cu film laminated thereon. In this case, the Ti oxide film is similarly removed directly before formation of the Al--Cu film, thereby preventing the growth of the Al oxide film. With this method, it is possible to highly keep thermal flow of a conductive film in a high pressure reflow process, and hence to desirably bury a connection hole with the conductive film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.