Method of producing a semiconductor device of SiC

US6306773A · kind A · utility

Inventors

• Christian Adås · Stockholm, SE
• Stefan Karlsson · Linköping, SE
• Andrei Konstantinov · Linköping, SE
• Christopher Harris · Sollentuna, SE
• Thomas Horman · Stockholm, SE

Key dates

• Filing date: Feb 1, 2000
• Grant date: Oct 23, 2001
• Expiry date: Feb 1, 2020

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2201/0133
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

The invention relates to a method for selective etching of SiC, the etching being carried out by applying a positive potential to a layer (3; 8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC. The invention also relates to a method for producing a SiC micro structure having free hanging parts (i.e. diaphragm, cantilever or beam) on a SiC-substrate, a method for producing a MEMS device of SiC having a free hanging structure, and a method for producing a piezo-resistive pressure sensor comprising the step of applying a positive potential to a layer (8) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC.