Electrode structures for light emitting devices
US6307218A · kind A · utility
198Cited by
11References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1998 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Nov 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A light emitting device includes a heterojunction having a p-type layer and an n-type layer. The n-electrode is electrically connected to the n-type layer while the p-electrode is electrically connected to the p-type layer. The p and n-electrodes are positioned to form a region having uniform light intensity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.