Patent · US Expired

Electrode structures for light emitting devices

US6307218A · kind A · utility

198Cited by
11References
36Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 20, 1998
Grant dateOct 23, 2001
Priority date
Expiry dateNov 20, 2018

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/819

Abstract

A light emitting device includes a heterojunction having a p-type layer and an n-type layer. The n-electrode is electrically connected to the n-type layer while the p-electrode is electrically connected to the p-type layer. The p and n-electrodes are positioned to form a region having uniform light intensity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.