Complementary junction field effect transistors
US6307223A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 9, 1999 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Dec 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/83
Abstract
Junction Field Effect Transistor (JFET) offers fast switching speed than bipolar transistor since JFET is a majority carrier device. This invention comprises two normally "off" JFETs, one in N-channel and one in P-channel to form Complementary Junction Field Effect Transistors for high speed, low voltage and/or high current applications. The discrete device structure is disclosed in this invention. The integrated Complementary Junction Field Effect Transistors structure processed in standard CMOS process is disclosed in this invention. A vertical gate structure of Complementary Junction Field Effect Transistors is disclosed. Complementary Junction Field Effect Transistors structure is also disclosed in SOI substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.