Lovoltech, Inc.
36Patents
0Active
36Granted
36Portfolio score
Filing activity: Oct 29, 1999 → May 3, 2005
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6661276B1 | MOSFET driver matching circuit for an enhancement mode JFET | Electricity | 80 | Expired |
| US6307223A | Complementary junction field effect transistors | Electricity | 45 | Expired |
| US7045397B1 | JFET and MESFET structures for low voltage high current and high frequency applications | Electricity | 35 | Expired |
| US6528880B1 | Semiconductor package for power JFET having copper plate for source and ribbon contact for gate | Electricity | 33 | Expired |
| US6251716A | JFET structure and manufacture method for low on-resistance and low voltage application | Electricity | 25 | Expired |
| US6349047B1 | Full wave rectifier circuit using normally off JFETs | Electricity | 23 | Expired |
| US7009228B1 | Guard ring structure and method for fabricating same | Electricity | 22 | Expired |
| US6304007A | Switcher for switching capacitors | Electricity | 20 | Expired |
| US6356059B1 | Buck converter with normally off JFET | Emerging Cross-Sectional Technologies | 19 | Expired |
| US7038260B1 | Dual gate structure for a FET and method for fabricating same | Electricity | 18 | Expired |
| US6921932B1 | JFET and MESFET structures for low voltage, high current and high frequency applications | Electricity | 17 | Expired |
| US6355513B1 | Asymmetric depletion region for normally off JFET | Electricity | 16 | Expired |
| US6549439B1 | Full wave rectifier circuit using normally off JFETS | Electricity | 16 | Expired |
| US6580252B1 | Boost circuit with normally off JFET | Electricity | 15 | Expired |
| US6281705A | Power supply module in integrated circuits | Electricity | 15 | Expired |
| US6774417B1 | Electrostatic discharge protection device for integrated circuits | Electricity | 14 | Expired |
| US7098634B1 | Buck-boost circuit with normally off JFET | Electricity | 14 | Expired |
| US6777722B1 | Method and structure for double dose gate in a JFET | Electricity | 13 | Expired |
| US6486011B1 | JFET structure and manufacture method for low on-resistance and low voltage application | Electricity | 13 | Expired |
| US6696706B1 | Structure and method for a junction field effect transistor with reduced gate capacitance | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6542001B1 | Power supply module in integrated circuits | Electricity | 11 | Expired |
| US6995052B1 | Method and structure for double dose gate in a JFET | Electricity | 11 | Expired |
| US6566936B1 | Two terminal rectifier normally OFF JFET | Electricity | 10 | Expired |
| US7009229B1 | Electrostatic discharge protection device for integrated circuits | Electricity | 10 | Expired |
| US6747342B1 | Flip-chip packaging | Electricity | 10 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.