Semiconductor device and manufacturing method thereof
US6307267A · kind A · utility
9Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1998 |
| Grant date | Oct 23, 2001 |
| Priority date | — |
| Expiry date | Dec 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is constituted by embedding an Al wiring layer in a second object formed on an interlayer-insulating film on one principal plane of a semiconductor substrate and connecting with an Al wiring formed on the substrate and at least, an Nb liner film and NbAl alloy film are formed between the second object and the Al wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.