Attenuated phase shift mask and a method for making the mask
US6309780A · kind A · utility
11Cited by
1References
97Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 15, 1999 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Jun 15, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The attenuated phase shift mask in accordance with one embodiment of the present invention for use in lithography at or below 0.20 .mu.m and for use at wavelengths below 300 nm includes a substrate with a layer deposited on the substrate. The layer comprises a group IV, V or VI transitional metal nitride and silicon nitride Si.sub.x N.sub.y. The attenuated phase shift mask has a thickness between about 500 angstroms and 2000 angstroms, where the group IV, V or VI transitional metal nitride comprises about ten to forty percent of the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.