Bipolar transistor which can be controlled by field effect and method for producing the same

US6309920A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Thomas Laska · Birkenfeld, DE
• Franz Auerbach · Soest, DE
• Heinrich Brunner · Dorfen, DE
• Alfred Porst · Munich, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE
• Gerhard Miller · Landsberg am Lech, DE

Key dates

• Filing date: Apr 10, 2000
• Grant date: Oct 30, 2001
• Expiry date: Apr 10, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/441

Abstract

A method for forming a field effect vertical bipolar transistor that includes a semiconductive body that has at its top surface a plurality of emitter zones of one conductivity type, each surrounded by a base zone of the opposite conductivity type, and gate electrodes for creating a channel at the surface through the base zone into the bulk inner portion of the one conduction type and at a bottom surface a collector zone that includes a collector electrode overlying a collector layer of the opposite conduction type overlying a field stop layer heavily doped of the opposite conduction type overlying the inner portion lightly doped of the one conduction type. Each of the collector layer and the field stop layer is less than 2 microns in thickness and the collector layer is used to inject minority carriers into the inner zone when appropriately biased.