Fluorine-free barrier layer between conductor and insulator for degradation prevention
US6310300A · kind A · utility
52Cited by
16References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1996 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Nov 8, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit structure having improved resistance in metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.