Structures containing quantum conductive barrier layers

US6310359A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Susan E. Chaloux · Wappingers Falls, US
• Caroline Aussilhou · Le Coudray-Montceaux, FR
• Corinne Buchet · Corbeil-Essonnes, FR
• Heidi L. Greer · South Burlington, US
• Rajarao Jammy · Hopewell Junction, US
• Patrick Raffin · Joinville-le-Pont, FR
• Francis Rodier · Mondeville, FR
• Jean-Marc Rousseau · Ramonville-Saint-Agne, FR

Key dates

• Filing date: Apr 26, 2000
• Grant date: Oct 30, 2001
• Expiry date: Apr 26, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/68

Abstract

Improved reliability structures containing quantum conductive barrier layer structures are obtained by employing quantum conductive layers in combination with thin regions of amorphous or microcrystalline semiconductor material. The quantum conductive structures are especially useful when incorporated into trench capacitors to reduce or eliminate the occurrence of low temperature fails and single cell fails in DRAM circuits.