Jean-Marc Rousseau
6Patents
4h-index
26Co-inventors
46Inventor score
Filing activity: Apr 26, 2000 → May 9, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6268299A | Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability | Electricity | 52 | Expired |
| US6344673B1 | Multilayered quantum conducting barrier structures | Electricity | 34 | Expired |
| US6620724B1 | Low resistivity deep trench fill for DRAM and EDRAM applications | Electricity | 16 | Expired |
| US6344390B1 | Methods of forming the buried strap and its quantum barrier in deep trench cell capacitors | Electricity | 9 | Expired |
| US6399434B1 | Doped structures containing diffusion barriers | Electricity | 1 | Expired |
| US6310359A | Structures containing quantum conductive barrier layers | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.