Surface voltage sustaining structure for semiconductor devices having floating voltage terminal

US6310365A · kind A · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventor

• Xingbi Chen · Chengdu, CN

Key dates

• Filing date: Oct 8, 1999
• Grant date: Oct 30, 2001
• Expiry date: Oct 8, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

A surface voltage sustaining structure for semiconductor device which includes at least one high-side high-voltage device, comprises at least two surface voltage sustaining regions, wherein a first surface voltage sustaining region is for sustaining a voltage drop from a high voltage terminal of the high-side high-voltage device to a floating voltage terminal of the high-side high-voltage device, and a second surface voltage sustaining region is for sustaining a voltage drop from said high voltage terminal or from said floating voltage terminal to the substrate. The potential of the floating-voltage terminal of the high-side high-voltage device can vary (float) from the potential of the substrate up to the potential of the high voltage terminal. By means of the present invention, not only a high-side high-voltage device but also a low-side high-voltage device with a high voltage terminal having potential being the same as the floating voltage terminal and a low voltage terminal having potential being the same as the potential of the substrate, and integrated circuit devices with common terminals having a potential being the same as the floating voltage terminal, as well as integrat…