Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
US6312517A · kind A · utility
12Cited by
2References
8Claims
0Family size
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Key dates
| Filing date | May 11, 2000 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | May 11, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of lowering the resistivity of resultant silicon crystal from a Czochralski crystal growing process by adding arsenic dopant to the melt in multiple stages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.