Two-step AIN-PVD for improved film properties
US6312568A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Dec 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/076
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method of forming an aluminum nitride layer on a substrate in a processing chamber comprising depositing a first aluminum nitride layer at a first chamber pressure on a substrate, and then depositing a second aluminum nitride layer at a second chamber pressure higher than the first chamber pressure on the aluminum nitride nucleating layer. The first aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma in a processing chamber at a chamber pressure of about 1.5 to about 3 milliTorr. The second aluminum nitride layer is deposited by sputtering an aluminum target in a nitrogen and inert gas plasma at a chamber pressure of about 5 to about 10 milliTorr. The process may be carried out in the same physical vapor deposition chamber with the substrate being maintained at a temperature of preferably between about 125.degree. C. and about 500.degree. C. The advantages provided by the invention include an improved deposition rate for aluminum nitride with a preferred crystal orientation and improved layer properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.