Chemical vapor deposition apparatus and cleaning method thereof
US6312569A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 1998 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Oct 14, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/916
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition apparatus for depositing a thin film of highly dielectric materials for giga-capacity memory devices can reliably clean reaction products formed within the deposition chamber without sacrificing the production efficiency. The apparatus comprises a hermetic deposition chamber containing a substrate holding section for supporting a substrate, and a gas supply head disposed opposite to the substrate holding section for directing a gaseous feed material onto the substrate. There are provided a trapping member supporting device for supporting a trapping member so as to be opposite to a target cleaning area inside the deposition chamber, and a plasma generation device for generating a plasma between the target cleaning area and the trapping member supported by the trapping member supporting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.