Positive photoresist composition
US6312863A · kind A · utility
4Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2000 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Jul 18, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/022
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive photoresist composition includes (A) an alkali-soluble resin, and (B) a photosensitizer including an ester of a 1,2-naphthoquinonediazidesulfonyl compound with a compound of the following formula (I). This positive photoresist composition has satisfactory sensitivity, definition, and depth of focus properties, can form both dense patterns and isolation patterns with good shapes in the formation of mixed resist patterns, and can minimize inverted taper shape formation of isolation resist patterns induced by shifts of focal depth to the minus side. ##STR1##
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.