Integrated circuit insulator and method
US6313010A · kind A · utility
40Cited by
8References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1997 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Jun 9, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench isolation structure including high density plasma enchanced silicon dioxide trench filling (122) with chemical mechanical polishing removal of non-trench oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.