Process for the definition of openings in a dielectric layer
US6313040A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Sep 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for etching a dielectric layer, including the steps of forming, over the dielectric layer, a layer of polysilicon, forming over the layer of polysilicon a photoresist mask layer, etching the layer of polysilicon using the photoresist mask layer as an etching mask for selectively removing the layer of polysilicon, removing the photoresist mask layer from over the layer of polysilicon, etching the dielectric layer using the layer of polysilicon as a mask. Subsequently, the layer of polysilicon is converted into a layer of a transition metal silicide, and the layer of transition metal silicide is etched for selectively removing the latter from over the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.