Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device
US6313489A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Nov 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral transistor device in an SOI layer on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region and forms a lightly-doped drain region, and a drain contact region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and extending over a part of the lateral drift region adjacent the body region, with the gate electrode being at least substantially insulated from the body region and drift region by a surface insulation region. In order to increase breakdown voltage and/or reduce "on" resistance, the lateral drift region is provided with at least a portion with a retrograde doping profile. This may advantageously be done by doping the semiconductor substrate, oxidizing the substra…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.