MNOS-type memory using single electron transistor and driving method thereof
US6313503A · kind A · utility
16Cited by
6References
30Claims
0Family size
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Key dates
| Filing date | Jun 22, 2000 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Jun 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/402
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A metal nitride oxide semiconductor (MNOS) type memory using a threshold voltage variation (.DELTA.Vth) due to charging of a single electron when the width of a channel of the memory is set to be smaller than or equal to the Debye screen length (LD) of an electron, and a driving method thereof, are provided. The MNOS memory uses a threshold voltage variation (.DELTA.Vth) due to charging of a single electron occurring when the width of a channel is set to be smaller than or equal to the Debye screen length (LD) which depends on the impurity concentration of a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.