Jo-won Lee
25Patents
11h-index
28Co-inventors
75Inventor score
Filing activity: Jul 14, 1995 → May 31, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6566704B2 | Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof | Emerging Cross-Sectional Technologies | 121 | Expired |
| US6946703B2 | SONOS memory device having side gate stacks and method of manufacturing the same | Electricity | 72 | Expired |
| US6855603B2 | Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof | Emerging Cross-Sectional Technologies | 29 | Expired |
| US6597036B1 | Multi-value single electron memory using double-quantum dot and driving method thereof | Physics | 28 | Expired |
| US6833567B2 | Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof | Emerging Cross-Sectional Technologies | 24 | Expired |
| US6268273A | Fabrication method of single electron tunneling device | Emerging Cross-Sectional Technologies | 19 | Expired |
| US7345898B2 | Complementary nonvolatile memory device | Electricity | 17 | Expired |
| US6313503A | MNOS-type memory using single electron transistor and driving method thereof | Electricity | 16 | Expired |
| US6815294B2 | Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6930343B2 | Nonvolatile memory device utilizing a vertical nanotube | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7202521B2 | Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same | Electricity | 11 | Expired |
| US7187030B2 | SONOS memory device | Physics | 11 | Expired |
| US7020064B2 | Rewritable data storage using carbonaceous material and writing/reading method thereof | Physics | 7 | Expired |
| US5815910A | Method for manufacturing a magnetic head | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6479365B2 | Single electron transistor using porous silicon and manufacturing method thereof | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7374991B2 | SONOS memory device having side gate stacks and method of manufacturing the same | Electricity | 6 | Expired |
| US6180202A | Large capacity disk and method for manufacturing the same | Emerging Cross-Sectional Technologies | 5 | Expired |
| US8139387B2 | Method of erasing a memory device including complementary nonvolatile memory devices | Electricity | 3 | Active |
| US6414333B1 | Single electron transistor using porous silicon | Emerging Cross-Sectional Technologies | 3 | Expired |
| US7432554B2 | CMOS thin film transistor comprising common gate, logic device comprising the CMOS thin film transistor, and method of manufacturing the CMOS thin film transistor | Electricity | 3 | Expired |
| US9790364B2 | Thermoplastic resin composition and article comprising the same | Chemistry; Metallurgy | 2 | Active |
| US7719871B2 | Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same | Electricity | 1 | Active |
| US8237214B2 | Non-volatile memory device including metal-insulator transition material | Electricity | 0 | Active |
| US7759196B2 | Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the same | Electricity | 0 | Active |
| US10370535B2 | Flame retardant resin composition and molded article using the same | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.